English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Ultrahigh anomalous Hall sensitivity has been demonstrated in Ta/CoFe/Oxide/Ta multilayers. By changing oxides (MgO and HfO2) and annealing temperature, different annealing dependence of sensitivity was found in MgO-sample and HfO2-sample. For the MgO-sample, the anomalous Hall sensitivity reaches 18792 Ω/T in the as-deposited state and significantly reduces as annealing temperature increases. On the contrary, the sensitivity of the as-deposited HfO2-sample is only 765 Ω/T, while it remarkably increases with annealing temperature increasing, finally reaching 14741 Ω/T at 240°C. The opposite variation of anomalous sensitivity in two samples originates from the different change of magnetic anisotropy and anomalous Hall resistance during the annealing process. Our study provides a new perspective that both the choice of oxide material and the optimization of annealing treatment are important to the anomalous Hall sensitivity.

Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers