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We present 2.3 μm InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achieving balanced and optimal LDs performance. Accordingly, power of 8.6 mW was obtained with 2.3 μm wavelength. Our results demonstrate that superlattice layer may open a new avenue for high performance and improvement in mid-infrared laser diode

2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate