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An efficient technique for low temperature metal-induced nanocrystalline silicon fabrication is presented. The technique is based on laser annealing of thin films of “amorphous silicon-tin” composites combined with in situ control and monitoring with Raman technique. Laser annealing was shown to provide the possibility of fine-tuning the nanocrystals size and concentration, which is important in photovoltaic and thermoelectric devices fabrication

Nanocrystals Growth Control during Laser Annealing of Sn:(α-Si) Composites