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We have studied the carrier densities n of multilayer and monolayer epitaxial graphene devices over a wide range of temperatures T. It is found that, in the high temperature regime (typically T ≥ 200 K), ln⁡(n) shows a linear dependence of 1/T, showing activated behavior. Such results yield activation energies ΔE for charge trapping in epitaxial graphene ranging from 196 meV to 34 meV. We find that ΔE decreases with increasing mobility. Vacuum annealing experiments suggest that both adsorbates on EG and the SiC/graphene interface play a role in charge trapping in EG devices.

Charge Trapping in Monolayer and Multilayer Epitaxial Graphene