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Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2) flow ratios ( R H ) and substrate temperatures ( T S ). The optimal R H value for achieving high conducting TZO:H thin film decreased from 10% to 1% when T S increased from RT to 300°C. The lowest resistivity of 9.2 × 10 - 4 Ω-cm was obtained as T S = 100 °C and R H = 7.5 %. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing R H . The average visible transmittance decreased with increasing R H for the RT-deposited film, while it had not considerably changed with different R H for the 300°C-deposited films. The optical bandgap increased as R H increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that T S = 100 °C and R H = 7.5 % were optimal conditions for TZO thin films as transparent conducting electrode applications.

Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures