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Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3 substrates buffered with La0.7Sr0.3MnO3 (LSMO) electrodes. Amorphous TiOx thin films were deposited on top of PZT at various temperatures and oxygen chamber pressures. Bipolar resistive switching characteristics of Pt/TiOx/PZT/LSMO heterostructures are found to vary with TiOx deposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior. The observations are discussed in terms of the concentration and migration of oxygen vacancies in the TiOx layer

advances in materials science and engineering

Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3Bilayers