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Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3 substrates buffered with La0.7Sr0.3MnO3 (LSMO) electrodes. Amorphous T i O x thin films were deposited on top of PZT at various temperatures and oxygen chamber pressures. Bipolar resistive switching characteristics of Pt/ T i O x /PZT/LSMO heterostructures are found to vary with T i O x deposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior. The observations are discussed in terms of the concentration and migration of oxygen vacancies in the T i O x layer.

Deposition-Parameter-Determined Resistive Switching Characteristics in TiO x/Pb(Zr0.52Ti0.48)O3 Bilayers