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Silicon nanowires are prepared by the method of the two-step metal-assistedwet chemical etching. We have analyzed the structure of solid, rough and porousnanowire surfaces of boron-doped silicon substrates with resistivities of \rho> 1000 \Omega cm, \rho = 14-23 \Omega cm, \rho < 0.01 \Omega cm by scanningelectron microscopy and nitrogen gas adsorption. Silicon nanowires preparedfrom highly-doped silicon reveal mesopores on their surface. However, we founda limit for pore formation. Pores were only formed by etching below a criticalH$_2$O$_2$ concentration (c$_{\mbox{H}_2\mbox{O}_2}$ < 0.3 M). Furthermore, wehave determined the pore size distribution in dependence on the etchingparameters and characterized the morphology of the pores on the nanowiresurface. The pores are in the regime of small mesopores with a mean diameter of9-13 nm. Crystal and surface structure of individual mesoporous nanowires havebeen investigated by transmission electron microscopy. The vibrationalproperties of nanowire ensembles have been investigated by Raman spectroscopy.Heavily boron-doped silicon nanowires are highly porous and the remainingsingle crystalline silicon nanoscale mesh leads to a redshift and a strongasymmetric line broadening for Raman scattering by optical phonons at 520cm$^{-1}$. This redshift, {\lambda}$_{\mbox{Si bulk}}$ = 520 cm$^{-1}$$\rightarrow$ {\lambda}$_{\mbox{Si nanowire}}$ = 512 cm$^{-1}$, hints to aphonon confinement in mesoporous single crystalline silicon nanowire.

Controlled pore formation on mesoporous single crystalline silicon nanowires: threshold and mechanisms