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We present the synthesis of ultrananocrystalline diamond (UNCD) films by application of hot filament chemical vapor deposition (HFCVD). We furthermore studied the different morphological, structural, and electrical properties. The grown films are fine grained with grain sizes between 4 and 7 nm. The UNCD films exhibit different electrical conductivities, dependent on grain boundary structure. We present different contact metallizations exhibiting ohmic contact behavior and good adhesion to the UNCD surface. The temperature dependence of the electrical conductivity is presented between −200 and 900°C. We furthermore present spectroscopic investigations of the films, supporting that the origin of the conductivity is the structure and volume of the grain boundary.

N-Type Conductive Ultrananocrystalline Diamond Films Grown by Hot Filament CVD