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Indium oxide (In 2 O 3 ) thin films annealed at various annealing temperatures were prepared by using spin-coating method for dye-sensitized solar cells (DSSCs). The objective of this research is to enhance the photovoltaic conversion efficiency in In 2 O 3  thin films by finding the optimum annealing temperature and also to study the reason for high and low performance in the annealed In 2 O 3  thin films. The structural and morphological characteristics of In 2 O 3  thin films were studied via XRD patterns, atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), EDX sampling, and transmission electron microscopy (TEM). The annealing treatment modified the nanostructures of the In 2 O 3  thin films viewed through FESEM images. The In 2 O 3 -450°C-based DSSC exhibited better photovoltaic performance than the other annealed thin films of 1.54%. The electron properties were studied by electrochemical impedance spectroscopy (EIS) unit. The In 2 O 3 -450°C thin films provide larger diffusion rate, low recombination effect, and longer electron lifetime, thus enhancing the performance of DSSC.

Structural, Morphological, and Electron Transport Studies of Annealing Dependent In2O3Dye-Sensitized Solar Cell

Structural, Morphological, and Electron Transport Studies of Annealing Dependent In₂O₃Dye-Sensitized Solar Cell