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SiC was formed using volcanic ash as starting material and concentrated sunlight as energy resource. The solar furnace was composed of two parts: Fresnel lens and reacting furnace. The reacting furnace was composed of a cylindrical vacuum chamber and quartz glass plate functioning to guide the concentrated sunlight into the furnace and was placed at the focal point of the Fresnel lens. The sample was made from the mixture of silica formed from volcanic ash and graphite and placed in the carbon crucible inside the reacting furnace. The temperature in the carbon crucible reached more than 1500°C. After the reaction using concentrated light, β-SiC was formed. The weight % of formed SiC was 90.5%.

Formation of Silicon Carbide Using Volcanic Ash as Starting Material and Concentrated Sunlight as Energy Resource