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This paper demonstrated the fabrication and optoelectronic characteristics of ZnO ultraviolet (UV) photodetectors fabricated on Si substrates with oxidized nano-porous-Si (ONPS) buffer layers. ONPS layers were prepared on the surfaces of Si substrates by use of an electrochemical anodization technique following a rapid-thermal-oxidation process. Experimental results indicated that application of ONPS buffer layers not only improved the crystallinty of the deposited ZnO thin films but also greatly restricted the visible-to-infrared photoresponse that was generated from the light absorption of Si substrates. The developed ZnO-on-ONPS photodiodes achieved high photoresponsivity for the incident UV light of 300 ∼ 400 nm and got a large photo-to-dark current ratio up to 104 at wavelength of 375 nm under a bias of 5 V. Therefore, ZnO on ONPS provides a highly potential approach for the development of low-cost visible-blind UV photodetectors

Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates