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This study confirms that the surface texturation of window layer (Al-Y codoped ZnO) etched by diluted HCl effectively increases conversion efficiency of p-Ni1-x O:Li/n-Si heterojunction solar cells. The results show that the short circuit current density (Jsc) of cell etched at 10 s increases about 8.5% compared to unetched cell, which also corresponds to the increase of efficient photoelectric conversion in NIR region as shown in external quantum efficiency spectra. It is attributed to the increase of light transmittance of AZOY thin films in the NIR region and the effective light path of the NIR wavelength, which results in increasing of light absorption in the base layer.

journal of nanomaterials

Improvement of Short-Circuit Current Density in p-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mtext>N</mml:mtext><mml:msub><mml:mrow><mml:mtext>i</mml:mtext></mml:mrow><mml:mrow><mml:mi>1</mml:mi><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>O:Li/n-Si Heterojunction Solar Cells by Wet Chemical Etching

Improvement of Short-Circuit Current Density in p-Ni1−xO:Li/n-Si Heterojunction Solar Cells by Wet Chemical Etching