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We reported the various nanopillars on GaN-based LED to enhance light-extraction efficiency prepared by successive ionic layer adsorption and reaction method (SILAR). Indium tin oxide (ITO) with thickness of 1 μm as transparent contact layer was grown to improve the electrical characteristics of the LEDs, including series resistance and operating voltage. SILAR-deposition ZnO nanoparticles on SiO2 were used as etching nanomasks. Multiple nanopillars were simultaneously formed on overall surfaces of ITO p- and n-GaN by ICP etching. The proposed GaN-based LEDs with nanopillars increase light output power by 7%–20.3% (at 20 mA) over that of regular GaN-based LEDs. The difference in light output power can be attributed to differences in materials and shapes of nanopillars, resulting in a reduction in Fresnel reflection by the roughened surface of GaN-based LEDs.

SILAR-Based Application of Various Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency