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Core-shell-structured CdSe/SiOx nanowires were synthesized on an equilateral triangle Si (111) substrate through a simple one-step thermal evaporation process. SEM, TEM, and XRD investigations confirmed the core-shell structure; that is, the core zone is single crystalline CdSe and the shell zone is SiOx amorphous layer and CdSe core was grown along (001) direction. Two-stage growth process was present to explain the growth mechanism of the core/shell nanwires. The silicon substrate of designed equilateral triangle providing the silicon source is the key factor to form the core-shell nanowires, which is significant for fabrication of nanowire-core sheathed with a silica system. The PL of the product studied at room temperature showed two emission bands around 715 and 560 nm, which originate from the band-band transition of CdSe cores and the amorphous SiOx shells, respectively

journal of nanomaterials

Simple Synthesis and Growth Mechanism of Core/Shell CdSe/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mrow><mml:mtext>SiO</mml:mtext></mml:mrow><mml:mtext>x</mml:mtext></mml:msub></mml:mrow></mml:math>Nanowires

Simple Synthesis and Growth Mechanism of Core/Shell CdSe/SiOxNanowires