English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We propose a simple model, derived from Pao-Sah theory, valid in all modes from weakto strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field EffectTransistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits ofintegration calculated from Taylor polynomials of inverse functions. The solution is presentedanalytically wherever possible, and the integration is made from simple numerical methods(Simpson, Romberg) or adaptative algorithms and can be implemented in simple C-programor in usual mathematical software. The transconductance and the diffusion current are alsocalculated with the same model

Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral