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The structural, optical, and conductivity properties of silicon film deposited on cerium dioxide buffer layer were studied. The electronic structure of system consists of various defect levels inside band gap. The temperature spatial distribution plays a great role in silicon crystallization. The field destruction of crystal phase and its restoration, after annealing, were investigated

journal of nanomaterials

Field Effect on Crystal Phase of Silicon in Si/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mrow><mml:mtext>CeO</mml:mtext></mml:mrow><mml:mrow><mml:mtext>2</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math>/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mrow><mml:mtext>SiO</mml:mtext></mml:mrow><mml:mrow><mml:mrow><mml:mtext>2</mml:mtext></mml:mrow></mml:mrow></mml:msub></mml:mrow></mml:math>Structure

Field Effect on Crystal Phase of Silicon in Si/CeO2/SiO2Structure