English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A fully integrated CMOS tunable image-rejection low-noiseamplifier (IRLNA) has been designed using Silterra'sindustry standard 0.18Ã¢Â€Â‰ÃŽÂ¼m RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19Ã¢Â€Â‰dB to the noise figure of the low-noise amplifier (LNA). A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8Ã¢Â€Â‰dB, S11 of Ã¢ÂˆÂ’17.8Ã¢Â€Â‰dB, S22 of Ã¢ÂˆÂ’10.7Ã¢Â€Â‰dB, and input 1Ã¢Â€Â‰dB compression point of Ã¢ÂˆÂ’12Ã¢Â€Â‰dBm at 3Ã¢Â€Â‰GH

Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor