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ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influenceof thermal treatment on the electronic properties of the films has been particularly investigated. Electricalmeasurements were performed between 95 and 600 K. Free carriers concentration in the film weremeasured by Hall effect coefficient. Optical indices were determined by computer drawing of chartsallowing to simplify Manifacier method

active and passive electronic components

Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions