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(In,Ga)N alloys are very promising materials for solar water splitting due to their large absorption coefficient for visible light and the possibility to tune the bandgap energy across the entire solar spectrum. In addition, their conduction and valence band edges can straddle the H+/H2 and O2/H2O redox potentials. However, it is difficult to grow (In,Ga)N bulk layers in high structural quality because of the lack of lattice-matched substrates. In this work, we report solar hydrogen generation using p(In,Ga)N nanowires which are able to accommodate lattice mismatches by lateral elastic relaxation. As a photocathode the (In,Ga)N samples were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy without catalysts. There average indium content was around 4%. As a well defined and characterized reference and model material also GaN nanowires onto silicon were prepared.

(Invited) P-(In,Ga)N Nanowire Photocathodes For Solar Hydrogen Evolution