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Silicon (Si) has been investigated as a lithium-ion battery anode due to its high theoretical capacity (4200 mA h/cm) over carbon electrodes (372 mAh/cm ). Although Si provides high energy capacity due to high order Li xSi alloy ratios, it suffers from high semi-irreversibl e volumetric expansion upon lithiation. The 200-300% volumetric increase causes structural cracking and electrode detachment resulting in early electrode f ailure [1]. Structured electrodes such as porous Si and nanowires have shown to provide some strain relaxat ion but still suffer from electrode dislocation. To ove rcome this issue, ultra-thin oxide passivation on Si has been introduced [2]. The purpose of such a barrier layer is to allow ionic diffusion while maintaining the mechani cal stability of the electrode against radial expansion . In this study, the effect of Atomic Layer Deposited (ALD) h ig k oxide passivation on the early cycling property o f porous Si (PS) electrode was investigated.

meeting abstracts/meeting abstracts (electrochemical society. cd-rom)

Improving Nano/Micro Porous Silicon Electrode Properties By Ultra-Thin Atomic Layer Deposited (ALD) High-k Oxide Passivation for High Energy Density Li-Ion Battery Application