Open AccessReaction Mechanism of Non-Heating SiO2 Atomic Layer Deposition by Using TDMAS and Plasma Excited Water Vapor
Author(s) -
Fumihiko Hirose,
Kensaku Kanomata,
Motomu Degai,
Momiyama Katsuaki
Publication year - 2012
Publication title -
ecs meeting abstracts
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-02/28/2461
Subject(s) - plasma , excited state , layer (electronics) , atomic layer deposition , mechanism (biology) , deposition (geology) , water vapor , materials science , atomic physics , plasma processing , chemical physics , chemistry , nanotechnology , physics , nuclear physics , organic chemistry , geology , paleontology , sediment , quantum mechanics
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