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The effect of TiN capping on high temperature annealed W gated rare-earth oxide (RE-oxide) capacitors has been characterized. The increase in EOT has been well suppressed with TiN capping and a 0.55-nm EOT has been achieved even after an 900 o C annealing. The electrical characterization has revealed a significant reduction in the capacitance-voltage (C-V) hysteresis when the annealing temperature is 900 o C or higher.

TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT