Open AccessAnalysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate
Author(s) -
G. Guégan,
J. Pretet,
R. Gwoziecki,
O. Gonnard,
G. Gouget,
P. Touret,
C. Raynaud,
S. Deleonibus
Publication year - 2007
Publication title -
ecs meeting abstracts
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2007-01/15/726
Subject(s) - silicon on insulator , quantum tunnelling , materials science , optoelectronics , mosfet , electronic engineering , electrical engineering , transistor , silicon , engineering , voltage
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