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Self-assembled monolayers (SAMs) have been used to improve both the positiveand negative bias-stress stability of amorphous indium gallium zinc oxide(IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA)and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channelsurfaces were shown to significantly reduce bias stress turn-on voltage shiftscompared to IGZO back channel surfaces with no SAMs. FPA was found to have alower surface energy and lower packing density than HPA, as well as lower biasstress turn-on voltage shifts. The improved stability of IGZO TFTs with SAMscan be primarily attributed to a reduction in molecular adsorption ofcontaminants on the IGZO back channel surface and minimal trapping statespresent with phosphonic acid binding to the IGZO surface.

Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors