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This paper reports on the influence of deposition temperature on the structure, composition, and electrical properties of TiO2 thin filmsdepositedonn-typesilicon(100)byplasma-assisted atomiclayerdeposition(PA-ALD).TiO2 layers ∼20nmthick,depositedat temperatures ranging from 100 to 300◦C, were investigated. Samples deposited at 200◦C and 250◦C had the most uniform coverage as determined by atomic force microscopy. The average carbon concentration throughout the oxide layer and at the TiO2/Si interface was lowest at 200 ◦ C. Metal oxide semiconductor capacitors (MOSCAPs) were fabricated, and profiled by capacitance-voltage techniques. The sample prepared at 200 ◦ C had negligible hysteresis (from a capacitance-voltage plot) and the lowest interface trap density (as extracted using the conductance method). Current-voltage measurements were carried out with top-to-bottom structures. At −2 V gate bias voltage, the smallest leakage current was 1.22 × 10 −5 A/cm 2 for the 100 ◦ C deposited sample.

Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

Influence of Atomic Layer Deposition Temperatures on TiO₂/n-Si MOS Capacitor