English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

A graphene field-effect-transistor (GFET) model calibrated with extracteddevice parameters and a commercial 65 nm silicon MOSFET model are compared withrespect to their radio frequency behavior. GFETs slightly lag behind CMOS interms of speed despite their higher mobility. This is counterintuitive, but canbe explained by the effect of a strongly nonlinear voltage-dependent gatecapacitance. GFETs achieve their maximum performance only for narrow ranges ofVDS and IDS, which must be carefully considered for circuit design. For ourparameter set, GFETs require at least {\mu} = 3000 cm2 V-1 s-1 to achieve thesame performance as 65 nm silicon MOSFETs.

RF Performance Projections of Graphene FETs vs. Silicon MOSFETs