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Material and electrical properties of TiO2/HfO2 bi-layer gate stacks were investigated for germanium (Ge) based metal-oxidesemiconductor devices. In situ NH3 plasma treatment was employed to passivate the Ge surface and promising performance including low capacitance-voltage hysteresis and interface trap density was achieved. It shows a superior dielectric breakdown voltage (4.2–3.4 V) for the TiO2/HfO2 bi-layer stacks than HfO2 single layer stack at a similar capacitance equivalent thickness (CET) of 1.6 nm. A minimum CET of 1.4 nm was obtained for capacitors on both p and n-type Ge (100) with a gate leakage current density< 4 10 7 A/cm at VFB 6 1 V. VC 2011 The Electrochemical Society. [DOI: 10.1149/1.3559770] All rights reserved.

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer