English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Cobalt oxide thin films have been deposited with remote plasma atomic layer deposition (ALD) within a wide temperature window (100-400 degrees C), using CoCp2 as a cobalt precursor and with remote O-2 plasma as the oxidant source. The growth rate was 0.05 nm/cycle and both the precursor dosing and plasma exposure exhibit saturation after 2 s, all independent of the substrate temperature. This novel combination resulted in the deposition of high density (similar to 5.8 g/cm(3)), stoichiometric Co3O4 showing a preferential (111) orientation for all temperatures. X-ray diffraction, spectroscopic ellipsometry, and Fourier transform infrared spectroscopy independently indicate an increasing crystallinity with increasing substrate temperature, whereas the surface roughness remains low (

Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films