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The O2 plasma pretreatment was investigated for passivation for HfO2 high-k Ge metal-oxide-semiconductor devices. With proper in situ O2 plasma passivation, the capacitance–voltage hysteresis was substantially reduced from 900 to 50 mV for the HfO2/ Ge gate stacks. Capacitors show well-behaved capacitance–voltage characteristics on both pand n-type Ge substrates, indicating an efficient electrical passivation of the Ge interface. The interface trap density for both types of Ge substrates after passivation is below 4 10 eV cm . A leakage current density of 1.5 10 7 and 2.1 10 8 A/cm was obtained for the HfO2/p-Ge and HfO2/n-Ge capacitor with equivalent oxide thickness of 1.8 nm at VFB 6 1 V, respectively. VC 2011 The Electrochemical Society. [DOI: 10.1149/1.3551461] All rights reserved.

Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O2 Plasma