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Graphene was epitaxially grown on both the C- and Si-faces of 4H- and6H-SiC(0001) under an argon atmosphere and under high vacuum conditions.Following growth, samples were imaged with Nomarski interference contrast andatomic force microscopies and it was found that growth under argon led toimproved morphologies on the C-face films but the Si-face films were notsignificantly affected. Free carrier transport studies were conducted throughHall effect measurements, and carrier mobilities were found to increase andsheet carrier densities were found to decrease for those films grown underargon as compared to high vacuum conditions. The improved mobilities andconcurrent decreases in sheet carrier densities suggest a decrease inscattering in the films grown under argon.

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide