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n-Si/Cd and n-Si/Pb Schottky junctions have been prepared by electrodeposition of Cd or Pb from acidic aqueous solutions onto H-terminated and CH3-terminated n-type Si(111) surfaces. For both nondegenerately (n-) and degenerately (n+-) doped H–Si(111) electrodes, Cd and Pb were readily electroplated and oxidatively stripped, consistent with a small barrier height (Phib) at the Si/solution and the Si/metal junctions. Electrodeposition of Cd or Pb onto degenerately doped CH3-terminated n+-Si(111) electrodes occurred at the same potentials as Cd or Pd electrodeposition onto H-terminated n+-Si(111). However, electrodeposition on nondegenerately doped CH3-terminated n-Si(111) surfaces was significantly shifted to more negative applied potentials (by −130 and −347 mV, respectively), and the anodic stripping of the electrodeposited metals was severely attenuated, indicating large values of Phib for contacts on nondegenerately doped n-type CH3–Si(111) surfaces. With either Cd or Pb, current–voltage measurements on the dry, electrodeposited Schottky junctions indicated that much larger values of Phib were obtained on CH3-terminated n-Si(111) surfaces than on H-terminated n-Si(111) surfaces. Chronoamperometric data indicated that CH3–Si(111) surfaces possessed an order-of-magnitude lower density of nucleation sites for metal electrodeposition than did H–Si(111) surfaces, attesting to the high degree of structural passivation afforded by the CH3–Si surface modification.

Behavior of Electrodeposited Cd and Pb Schottky Junctions on CH[sub 3]-Terminated n-Si(111) Surfaces