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We investigated the electrical properties and charge transport mechanisms of a rubidium-carbonate (Rb 2 CO 3 )-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transporting layer (ETL). The electron-only devices and photoemission spectroscopy analysis revealed that the formation of doping-induced gap states dominantly contributes to the improvement of carrier transport characteristics of the doped system. High-efficiency green phosphorescent p-doping/intrinsic/n-doping (p-i-n) organic light emitting diodes were demonstrated using the Rb 2 CO 3 -doped Bphen ETL and rhenium oxide (ReO 3 )-doped N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine hole transporting layer, exhibiting an external quantum efficiency of 19.2%, power efficiency of 76 lm/W, and low operation voltage of 3.6 V at 1000 cd/m 2 .

Rubidium-Carbonate-Doped 4,7-Diphenyl-1,10-phenanthroline Electron Transporting Layer for High-Efficiency p-i-n Organic Light Emitting Diodes