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dInstitute of Microelectronics, Singapore 117685 e Singapore Institute of Manufacturing Technology (SIMTech), Singapore 638075 Laser-induced melt-mediated Ni-based germanosilicide has been formed on condensed SiGe substrates with 40% Ge. Pure Ni germanosilicide formation was plagued by the presence of amorphous oxygen-rich globules. Platinum alloying has greatly improved the morphology of the laser-induced NiPt germanosilicide with the alleviation of oxygen incorporation during laser annealing. This results in an improvement in the surface roughness and electrical conductivity of the germanosilicide film. Low affinity of Pt toward oxygen is believed to have resulted in this improvement.

Laser-Induced Melt-Mediated Ni(Pt) Germanosilicide Formation on Condensed Si[sub 1−x]Ge[sub x]/Si Substrates