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The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.

Adhesive Bonding of InP∕InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene