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Momentum, heat, and mass transfer processes were studied in a vertical cylinder reactor for the epitaxial growth of Si from SiCl/sub 4/ in H/sub 2/ by chemical vapor deposition. An analytical solution to the problems of heat and mass transfer in a tapered annulus based on constant transport properties and fully developed laminar flow is presented. The mean gas-phase temperature and deposition rate distribution of silicon are calculated within the reactor by using a developing temperature model. Results of experimental studies of silicon deposition from SiCl/sub 4/ in H/sub 2/ at 1200/sup 0/C in a vertical cylinder reactor are compared with the analytical results and with other models of diffusion-controlled chemical vapor deposition. This study provides an analytical method for calculating epitaxial deposition rate distributions in vertical cylinder reactors, and for designing reactors to improve the yield and uniformity of epitaxial growth. 7 figures, 2 tables.

Analysis of Transport Processes in Vertical Cylinder Epitaxy Reactors