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The electrochemical behavior of tantalum in the form of in an eutectic melt has been studied by linear voltammetry in the temperature range of 560 to 815°C with and without additions of . An amperometric titration has been performed by measuring the heights of the cathodic and the anodic peaks. It was shown that at a molar ratio the predominating complex in the melt is , whereas with an molar ratio of 2 it is , probably in the form of . Increase in the molar ratio in excess of two leads to a decrease of tantalum concentration in the melt, and precipitation of occurs. Both the fluoro complex and the monooxofluoro complex were reduced to metal in a single five‐electron step. The fluoro complexes, in the temperature range 625 to 815°C with potential scan rates 0.5 V s−1 they discharge irreversibly. Monooxofluoro complexes discharge irreversibly at all temperatures and scan rates studied. The diffusion coefficient of the tantalum fluoro complex depends on the temperature as with an activation energy of 39.1 kJ mol−1. For the tantalum monooxofluoro complex the dependence is with an activation energy of 43.9 kJ mol−1.

Electrochemical Study of Tantalum in Fluoride and Oxofluoride Melts