English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this paper we propose a modified structure of TFET incorporatingferroelectric oxide as the complementary gate dielectric operating in negativecapacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). Theproposed device effectively combines two different mechanisms of lowering thesub threshold swing (SS) for a transistor garnering a further lowered onecompared to conventional TFET. A simple yet accurate analytical tunnel currentmodel for the proposed device is also presented here. The developed analyticalmodel demonstrates high ON current at low $V_{GS}$ and exhibits lower SS.

Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current