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High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent interface between GaAsP and SiGe alloys on the overall defect morphology.United States. Army Research Office (Grant W911NF-09-1-0222

Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces

Controlling Epitaxial GaAs_xP_1-x/Si_1-yGe_y Heterovalent Interfaces