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Battery-operated or energy-harvested IoT and cognitive SoCs in modern FinFET processes prefer the use of low-VMIN SRAMs for ultra-low power (ULP) operations. However, the 1:1:1 high-density (HD) FinFET 6T bitcell faces challenges in achieving a lower VMIN across process variation. The 6T bitcell VMIN improves either by increasing the size of the bitcell or by using combinations of peripheral assists (PAs) since a single PA cannot achieve the best VMIN across process variation. State-of-the-art works show some combinations of write and read PAs that lower the VMIN of 6T FinFET SRAMs. However, the better combinations of PA for 14nm HD 6T FinFET SRAMs are unknown. This work compares all the possible dual combinations of PAs and reveals the better ones. We show that in a usual column mux scenario the combination of negative bitline with VDD boosting and VDD collapse with VDD boosting in a proportion of 14% and 6% (total 20%), respectively, maximize the static VMIN improvement close to 191mV for ULP IoT and cognitive applications. We also show that a combination of wordline boosting with negative bitline and wordline boosting with VSS lowering achieve a 150mV and 25mV of dynamic VMIN improvement at the 5GHz frequency for the worst-case write and read corners, respectively, beating other combinations.

Multiple Combined Write-Read Peripheral Assists in 6T FinFET SRAMs for Low-VMIN IoT and Cognitive Applications