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A new CMOS large-current-output positive pump is proposed and compared with the conventional pump. In this new pump scheme, two auxiliary pumps which are driven by nonoverlapping clocks control the transfer and precharge switches, respectively, increasing the 'ON' conductance of the transfer switches very much at sub-1-V-V/sub DD/ range. The output current improvement of this new pump reaches to 1.6 times larger than the conventional pump with an area penalty less than 10%. This new pump was fabricated in 0.35-/spl mu/m n-well process technology and its effectiveness is firstly verified.

A large-current-output boosted voltage generator with non-overlapping clock control for sub-1-V memory applications