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Resistance fluctuation phenomenon in antidot lattices in the quantum Hallregime are studied. Magnetoresistance of finite antidot array systems in thequantum Hall plateau transition regime exhibits two types of oscillatoryeffect. One is the aperiodic resistance fluctuations (RFs) and the other is theAharonov-Bohm (AB)-type oscillations. Their dependences on the magnetic fieldand the gate voltage are quite distinct. While the aperiodic RFs are attributedto the complex evolution of the conducting network of compressible channels,the AB-type oscillations are interpreted in terms of edge states formed aroundindividual antidots. The self-consistent screening effect is important for theboth phenomenon, whereas, the single electron charging effect plays a minorrole in the present case.

Resistance fluctuations and Aharonov-Bohm-type oscillations in antidot arrays in the quantum Hall regime