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We show a zero-gap semiconducting (ZGS) state in the quasi-two-dimensionalorganic conductor $\alpha$-(BEDT-TTF)$_2$I$_3$ salt, which emerges underuniaxial pressure along the a-axis (the stacking axis of the BEDT-TTFmolecule). The ZGS state is the state in which a Dirac cone with the bandspectrum of a linear dispersion exists around the Fermi point connecting anunoccupied (electron) band with an occupied (hole) band. The spectrum exhibitsa large anisotropy in velocity, which depends on the direction from the Fermipoint. By varying the magnitude of several transfer energies of a tight-bindingmodel with four sites per unit cell, it is shown that the ZGS state exists in awide pressure range, and is attributable to the large anisotropy of thetransfer energies along the stacking axis.Comment: 6 pages, 8 figures, to be published in J. Phys. Soc. Jp

Pressure-Induced Zero-Gap Semiconducting State in Organic Conductor α-(BEDT-TTF)2I3Salt

Pressure-Induced Zero-Gap Semiconducting State in Organic Conductor α-(BEDT-TTF)₂I₃Salt