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Symmetry of photoexcited states with two photoinduced carriers intwo-dimensional Mott insulators is examined by applying the numerically exactdiagonalization method to finite-size clusters of a half-filled Hubbard modelin the strong-coupling limit. The symmetry of minimum-energy bound state isfound to be s-wave, which is different from a d_{x^2-y^2} wave of a two-holepair in doped Mott insulators. We demonstrate that the difference is originatedfrom an exchange of fermions due to the motion of a doubly occupied site.Correspondingly large-shift Raman scattering across the Mott gap exhibits aminimum-energy excitation in the A1 (s-wave) channel. We discuss implicationsof the results for the Raman scattering and other optical experiments.Comment: 7 pages, 9 figures, revised version, Journal of Physical Society of  Japan, Vol.75, No.3, in pres

Symmetry of Photoexcited States and Large-Shift Raman Scattering in Two-Dimensional Mott Insulators