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Nonlocal one-dimensional motions of a topological defect are induced byelectron tunneling through the dangling-bond states on the clean Ge(001)surface using scanning tunneling microscopy below 80 K. The direction of themotion depends both on the energy of the carriers in the surface state and onthe distance between the defect and the tunneling point. The results areinterpreted using an electronic excitation model by hot carriers injected tothe surface states. The critical distance of the motion is anisotropic andconsistent with the band structure of the surface states.Comment: 4 pages, 4 figures, to be published in J. Phys. Soc. Japa

Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in Surface States