Open AccessCharacterization of Resistive Switching States in W/Pr0.7Ca0.3MnO3 for a Submicron (φ250 nm) Via-Hole Structure
Author(s) -
Manzar Siddik,
Kuyyadi P. Biju,
Xinjun Liu,
Joonmyoung Lee,
Insung Kim,
Seonghyun Kim,
Wootae Lee,
Seungjae Jung,
Daeseok Lee,
Sharif Md. Sadaf,
Hyunsang Hwang
Publication year - 2011
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.50.105802
Subject(s) - raman spectroscopy , oxygen , resistive touchscreen , schottky barrier , analytical chemistry (journal) , characterization (materials science) , materials science , schottky diode , resistive random access memory , electrode , chemistry , optoelectronics , nanotechnology , physics , electrical engineering , optics , organic chemistry , chromatography , diode , engineering
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