Open AccessCharacterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods
Author(s) -
Takayoshi Shimura,
Tomoyuki Inoue,
Daisuke Shimokawa,
Takuji Hosoi,
Yasuhiko Imai,
Osami Sakata,
Shigeru Kimura,
Heiji Watanabe
Publication year - 2011
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.50.010112
Subject(s) - annealing (glass) , x ray crystallography , diffraction , materials science , condensation , crystallography , synchrotron , layer (electronics) , reciprocal lattice , microbeam , germanium , degradation (telecommunications) , x ray , analytical chemistry (journal) , chemistry , optics , silicon , nanotechnology , optoelectronics , composite material , physics , organic chemistry , computer science , telecommunications , thermodynamics
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