Open AccessPhysical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport
Author(s) -
Shinichi Takagi,
Mitsuru Takenaka
Publication year - 2011
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.50.010110
Subject(s) - materials science , field effect transistor , oxide , germanium , condensed matter physics , transistor , metal , analytical chemistry (journal) , optoelectronics , voltage , electrical engineering , chemistry , silicon , physics , metallurgy , chromatography , engineering
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