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The intrinsic channel properties of monolayer and multilayer graphene weresystematically investigated as a function of layer number by the exclusion ofcontact resistance using four-probe measurements. We show that the continuouschange in normalized sheet resistivity from graphite to a bilayer graphene isgoverned by one unique property, i.e., the band overlap, which markedlyincreases from 1 meV for a bilayer graphene to 11 meV for eight layers andeventually reaches 40 meV for graphite. The monolayer graphene, however, showeda deviation in temperature dependence due to a peculiar linear dispersion.Additionally, contact resistivity was extracted for the case of typical Cr/Auelectrodes. The observed high contact resistivity, which varies by three ordersof magnitude (from ~103 to 106 Ohm micron), might significantly mask theoutstanding performance of the monolayer graphene channel, suggesting itsimportance in future research.

Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene FET