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A two-band model involving the A- and B-valence bands was adopted to analyzethe temperature dependent Hall effect measured on N-doped \textit{p}-type ZnO.The hole transport characteristics (mobilities, and effective Hall factor) arecalculated using the ``relaxation time approximation'' as a function oftemperature. It is shown that the lattice scattering by the acousticdeformation potential is dominant. In the calculation of the scattering ratefor ionized impurity mechanism, the activation energy of 100 or 170 meV is usedat different compensation ratios between donor and acceptor concentrations. Thetheoretical Hall mobility at acceptor concentration of $7 \times 10^{18}$cm$^3$ is about 70 cm$^2$V$^{-1}$s$^{-1}$ with the activation energy of 100 meVand the compensation ratio of 0.8 at 300 K. We also found that the compensationratios conspicuously affected the Hall mobilities.Comment: 5page, 5 figures, accepted for publication in Jpn. J. Appl. Phy

Hole Transport inp-Type ZnO