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Electron tunneling is investigated experimentally and theoretically for a single nanocrystalline silicon quantum dot with a diameter of less than 10 nm. Nanocrystalline silicon quantum dots are deposited by very high frequency (VHF) plasma chemical vapor deposition (CVD) sparsely over the oxide-covered silicon substrate. The dots are then naturally oxidized at room temperature by exposing it to ambient air, resulting in an ultrathin oxide tunnel barrier. A current peak is clearly observed at room temperature with the highest peak-to-valley current ratio of about 17 by contact-mode atomic force microscopy (AFM). We also perform three-dimensional numerical simulations of the transmission spectrum and tunneling current based on the scattering matrix theory. In the current–voltage (I–V) characteristics calculated at room temperature we demonstrate the resonant tunneling current peaks associated with the quasi-bound state formed in a spherical silicon quantum dot.

Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot